Extended Base Schottky-Collector Bipolar Charge Plasma Transistor

In this paper, we have proposed a new device structure of schottky-collector bipolar charge plasma transistor (SC-BCPT) with an extended base of thickness (t_B = 25 nm). The charge plasma concept eliminates different doping requirements for emitter and base regions, as a result, simplified fabrication process and improved current gain (ß). However, extended base concept yields improved cut-off frequency (f_T) of the proposed device. The Hafnium and stack of TiN/HfSiOx/SOI doped with Fluorine metal electrodes were employed to induce electrons and holes concentration at the emitter and base regions, respectively. Two-dimensional TCAD simulations of the proposed device demonstrate higher current gain of 37×10⁶ and a peak cut-off frequency of 43.04 GHz as compared to the conventional SC-BCPT.