Title :
Heterodyning and nonlinear QWIPs
Author_Institution :
Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
Abstract :
Summary form only given. We have carried out several experiments on device optimization for high absorption, on heterodyne detection up to 82 GHz, and on various nonlinear effects using GaAs/AlGaAs QWIPs. Near-ideal (~100%) absorption quantum efficiency and room-temperature operation have been achieved, with specially designed devices having a large number of quantum wells and high well doping densities. Record-high frequencies up to 82GHz have been reached in heterodyne detection. Nonlinear effects caused by nonuniformity in potential distribution and laser intensity variation have been studied. Auto-correlation using a two-photon process has been demonstrated
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterodyne detection; infrared detectors; quantum well devices; semiconductor quantum wells; two-photon processes; 82 GHz; GaAs-AlGaAs; GaAs/AlGaAs QWIPs; auto-correlation; device optimization; heterodyne detection; high well doping densities; laser intensity variation; near-ideal absorption quantum efficiency; nonlinear effects; potential distribution nonuniformity; quantum well infrared photodetectors; quantum wells; room-temperature operation; two-photon process; Absorption; Councils; Frequency; Gallium arsenide; Gas detectors; Optical imaging; Photodetectors; Physics; Quantum cascade lasers; Temperature sensors;
Conference_Titel :
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-7105-4
DOI :
10.1109/LEOS.2001.969263
