DocumentCode :
376155
Title :
Investigation of 2D-lattice distributed reflector lasers
Author :
Sargent, Laurence J. ; Massara, Aeneas B. ; Gioannini, Mariangela ; Yong, Jennifer ; Heard, Peter J. ; Penty, Richard V. ; White, Ian H.
Author_Institution :
Centre for Commun. Res., Bristol Univ., UK
Volume :
1
fYear :
2001
fDate :
2001
Firstpage :
275
Abstract :
A detailed study of the InGaAsP-InP 2D-lattice MQW laser has been undertaken. Characterisation of the optical field intensity as a function of distance along the device cavity has shown that etching significantly alters the optical properties of the waveguide. A high value of coupling coefficient is obtained, with Kg >250cm -1. Modelling suggests that this high value is consistent with the mode-hop free single-mode emission found to hold in the etched device even under large-signal modulation at 10 Gb/s
Keywords :
diffraction gratings; gallium arsenide; gallium compounds; indium compounds; laser modes; laser theory; photonic band gap; quantum well lasers; semiconductor device models; waveguide lasers; 10 Gbit/s; 2D photonic crystal; 2D-lattice distributed reflector lasers; InGaAsP-InP; InGaAsP-InP 2D-lattice MQW laser; coupling coefficient; device cavity; etched device; grating design; large-signal modulation; mode-hop free single-mode emission; optical field intensity; optical properties; Distributed feedback devices; Etching; Gratings; Laser modes; Optical devices; Optical polarization; Optical waveguides; Quantum well lasers; Semiconductor laser arrays; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location :
San Diego, CA
ISSN :
1092-8081
Print_ISBN :
0-7803-7105-4
Type :
conf
DOI :
10.1109/LEOS.2001.969281
Filename :
969281
Link To Document :
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