Long wavelength GaInNAs ridge waveguide lasers with GaNAs barriers

Author

Ha, Wonill ; Gambin, Vincent ; Wistey, Mark ; Bank, Seth ; Kim, Seongsin ; Harris, James

Author_Institution

Solid States & Photonics Lab., Stanford Univ., CA, USA

Volume

1

fYear

2001

fDate

2001

Firstpage

332

Abstract

Summary form only given. We will present results of high efficiency long wavelength multiple quantum well (MQW) GaInNAs ridge-waveguide laser diodes using GaNAs barriers These ridge waveguide laser diodes have broad emission spectra covering 1.27 μm to 1.4 μm with the pulsed operation up to 90 C. A nine QW photoluminescence sample showed approximately 3 times stronger PL intensity than a three QW sample and is applicable to high power lasers

Keywords

III-V semiconductors; gallium arsenide; indium compounds; infrared spectra; laser transitions; optical pumping; photoluminescence; quantum well lasers; ridge waveguides; waveguide lasers; 1.27 to 1.4 micron; 90 C; GaInNAs; GaInNAs ridge-waveguide laser; GaNAs; GaNAs barriers; QW photoluminescence; broad emission spectra; high power lasers; long wavelength GaInNAs ridge waveguide lasers; pulsed operation; ridge waveguide laser diodes; room temperature; Gallium arsenide; Optical materials; Power lasers; Pump lasers; Quantum well lasers; Semiconductor lasers; Stimulated emission; Temperature distribution; Threshold current; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.969310

Filename

969310