Title :
High efficiency InGaAsN based quantum well lasers grown by GSMBE using a solid As source
Author :
Wei, Jian ; Xia, Fengnian ; Li, Chunqiang ; Forrest, Stephen R.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Abstract :
Summary form only given. The material was grown by gas source molecular beam epitaxy (GSMBE) with only InGaAsN quantum well grown using solid source As. The active N species was generated by flowing nitrogen through a radio frequency (RF) plasma source. The active region of the laser contained a single 9 nm thick, strained InGaAsN/GaAs quantum well embedded in a 0.18 μm thick GaAs separate confinement layer
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; optical fabrication; quantum well lasers; 0.18 micron; 9 nm; GaAs separate confinement layer; InGaAsN; InGaAsN based quantum well lasers; InGaAsN-GaAs; RF plasma source; active N species; gas source molecular beam epitaxy; solid As source; Gallium arsenide; Gas lasers; Molecular beam epitaxial growth; Nitrogen; Optical materials; Plasma confinement; Plasma sources; Quantum well lasers; Radio frequency; Solids;
Conference_Titel :
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-7105-4
DOI :
10.1109/LEOS.2001.969311
