Title :
Lasing characteristics and temperature analysis of strain compensated InGaAs(N)-GaAsP-GaAs (λ>1.17 μm) quantum well lasers
Author :
Tansu, N. ; Ying-Lan Chang ; Takeuchi, T. ; Bour, D.P. ; Corzine, S.W. ; Tan, M.R.T. ; Mawst, L.J.
Author_Institution :
Dept. of Electr. Comput. Eng., Wisconsin Univ., Madison, WI
Abstract :
Summary form only given. MOCVD is used for the growth of high performance, highly-strained InGaAs(N)-GaAs quantum-well (QW) lasers. Diode lasers, with a highly-strained In0.35Ga0.65As QW and GaAs0.85P0.15 tensile-strained barriers, are demonstrated with very low threshold current density (Jth = 65 A/cm2, L = 1500 μm) and transparency current density (J tr = 30 A/cm2), at a wavelength of 1.17 μm. External differential quantum efficiency (ηd) as high as 56% has also been achieved for the short cavity (L = 500 μm) devices
Keywords :
III-V semiconductors; MOCVD; current density; gallium arsenide; indium compounds; internal stresses; quantum well lasers; semiconductor quantum wells; 1.17 micron; 1500 micron; 500 micron; 56 percent; GaAs0.85P0.15; GaAs0.85P0.15 tensile-strained barriers; In0.35Ga0.65As; InGaAsN-GaAsP-GaAs; external differential quantum efficiency; highly-strained In0.35Ga0.65As QW; lasing characteristics; short cavity devices; strain compensated InGaAs(N)-GaAsP-GaAs quantum well lasers; temperature analysis; transparency current density; very low threshold current density; Capacitive sensors; Current density; Gallium arsenide; Indium gallium arsenide; Laboratories; Optical fiber communication; Optical transmitters; Quantum well lasers; Radiative recombination; Temperature dependence;
Conference_Titel :
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-7105-4
DOI :
10.1109/LEOS.2001.969312
