Aging model challenges in deeply scaled tri-gate technologies

As tri-gate transistor technologies continue to scale to smaller dimensions, a variety of aging mechanisms become important to include in models to accurately predict end-of-life transistor performance. Traditional aging effects such as BTI and hot carrier continue to play a role. However, modeling these mechanisms becomes more complicated with the addition of recovery, variation, and local self-heating. Further, second-order effects are starting to accumulate, such as recovery interactions, minority carrier gate injection, damage localization, and interactions between hot carrier and BTI. This work highlights the roles and impacts of these various effects and how they will need to fit into a comprehensive aging model.