Novel Charge Pumping method applied to tri-gate MOSFETs for reliability characterization

Charge Pumping (CP) has historically been a widely utilized tool to study reliability-limiting interface and near interface trapping centers in Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs). However, conventional CP methods are not effective for modern highly scaled devices due to high gate leakage current to CP current ratios. Fortunately, a newly developed CP technique has been developed, called frequency modulated CP (FMCP), which overcomes the limitations of conventional measurements and permits full CP studies to be successfully applied to highly scaled devices. In this work, we evaluate the practicality and usefulness of implementing FMCP to characterize Intel´s second generation 14nm tri-gate MOSFETs. This demonstration clearly highlights FMCP´s power and ability to provide critical information in current and future highly scaled technology nodes.