Title :
Field-induced generation of electron traps in the tunnel oxide of flash memory cells
Author_Institution :
Silicon Storage Technology, Inc. (a subsidiary of Microchip Technology Inc.), San Jose, CA, USA
Abstract :
The processes of trap generation and electron trapping in the tunnel oxide of SuperFlash memory cells have been analyzed. The strongly non-uniform distribution of electric field in the SuperFlash cell allowed us to rule out the electron- or hole-related mechanisms of trap generation. The experimental results of single-trap-induced modulation of the tunneling rate, and the analysis of field and potential distribution in the tunnel oxide, point to the high electric field as a direct cause of electron-trap generation.
Keywords :
"Electric fields","Tunneling","Electron traps","Degradation","Modulation","Logic gates"
Conference_Titel :
Integrated Reliability Workshop (IIRW), 2015 IEEE International
Print_ISBN :
978-1-4673-7395-1
Electronic_ISBN :
2374-8036
DOI :
10.1109/IIRW.2015.7437077
