Title :
Using the charge pumping geometric component to extract NBTI induced mobility degradation
Author :
Mohamed Boubaaya;Hakim Tahi;Cherifa Tahanout;Boualem Djezzar;Abdelmadjid Benabdelmomene;Amel Chenouf;Djamila Doumaz;Abdelhak Feraht Hemida
Author_Institution :
Division Micro?lectronique et Nanotechnologie, Centre de D?veloppement des Technologies Avanc?es (CDTA), 20 Ao?t 1956, Baba Hassen, Algiers 16303, Algeria
Abstract :
Instead, the classical consideration that the geometric component in charge pumping method (CP) is parasitic component, in this work we demonstrate that this component can be used to estimate the negative bias temperature (NBTI) induced mobility degradation using the charge pumping based method such as on- the-fly interface trap (OTFIT).
Keywords :
"Logic gates","Stress","Degradation","MOSFET","Charge pumps","Electron traps"
Conference_Titel :
Integrated Reliability Workshop (IIRW), 2015 IEEE International
Print_ISBN :
978-1-4673-7395-1
Electronic_ISBN :
2374-8036
DOI :
10.1109/IIRW.2015.7437083
