Title :
Hot Carrier Stress modeling: From degradation kinetics to trap distribution evolution
Author :
G. Torrente;X. Federspiel;D. Rideau;F. Monsieur;C. Tavernier;J. Coignus;D. Roy;G. Ghibaudo
Author_Institution :
STMicroelectronics, 850 rue Jean Monnet, F-38926 Crolles, France
Abstract :
A complete TCAD model addressing Hot Carrier Degradation for Flash technology is presented. After having underlined the need for a power law with a low exponent for the aging kinetics and considered a high activation energy reflecting the single electron impact mode, a fine calibration is achieved. Finally, analysis on trap distribution and aging rates at different channel locations are provided.
Keywords :
"Stress","Degradation","Hot carriers","Kinetic theory","Aging","Reliability","MOSFET"
Conference_Titel :
Integrated Reliability Workshop (IIRW), 2015 IEEE International
Print_ISBN :
978-1-4673-7395-1
Electronic_ISBN :
2374-8036
DOI :
10.1109/IIRW.2015.7437086
