DocumentCode :
3762389
Title :
FinFET reliability
Author :
Suresh Uppal
Author_Institution :
GLOBALFOUNDRIES, California, United States
fYear :
2015
Firstpage :
159
Lastpage :
161
Abstract :
For advanced nodes, semiconductor companies are making a transition to FinFET´s from planar devices. In moving from planar to FinFETs, new features due to 3-d shapes of Fins are introduced. These features can both improve or degrade reliability compared to the planar technologies. This tutorial will first introduce the fundamental concepts and current understanding in basic FEOL Reliability mechanisms such as TDDB, BTI and HCI. It will then provide a review of methodologies used to evaluate these mechanisms. The tutorial will then introduce and review the new features such as corners, sidewalls etc and how they impact FEOL reliability. Additional effects that become more important due to 3-d nature of FinFETs such as self-heating are also discussed and reviewed. The tutorial will attempt to project impact of FinFETs for next generation technologies.
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop (IIRW), 2015 IEEE International
Print_ISBN :
978-1-4673-7395-1
Electronic_ISBN :
2374-8036
Type :
conf
DOI :
10.1109/IIRW.2015.7437094
Filename :
7437094
Link To Document :
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