• DocumentCode
    3762481
  • Title

    Neuron MOSFET as a way to design a threshold gates with the threshold and input weights alterable in real time

  • Author

    R. Lashevsky;K. Takaara;M. Souma

  • Author_Institution
    Univ. of Aizu, Japan
  • fYear
    1998
  • Firstpage
    263
  • Lastpage
    266
  • Abstract
    MOS-transistors with floating gate (Neuron MOSFET or /spl nu/MOS) as a way to build threshold gates with parameters changeable in real time is discussed. Two types of /spl nu/MOS circuits, static and clocked, are under consideration. The latter is preferable for threshold gates with a large number of inputs. The possibility of minimizing the chip area and delay time is shown for the case of using /spl nu/MOS threshold gates to design VLSI neural networks with on-chip learning.
  • Keywords
    "Neurons","MOSFET circuits","Inverters","Clocks","Capacitance","Capacitors","Threshold voltage","State feedback","FETs","Delay effects"
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1998. IEEE APCCAS 1998. The 1998 IEEE Asia-Pacific Conference on
  • Print_ISBN
    0-7803-5146-0
  • Type

    conf

  • DOI
    10.1109/APCCAS.1998.743739
  • Filename
    743739