Design, analysis and comparison between CNTFET based ternary SRAM cell and PCRAM cell

This paper presents variation and comparison between emerging memory devices i.e, ternary SRAM cell and PCRAM cell. In nano range devices, Carbon nanotubes field effect transistor (CNTFET) have shown a remarkable performance. CNTFET has been proved as better replacement for silicon devices. Ternary logic emerges as better alternative to the conventional binary logic because of its simplicity and energy efficiency. Ternary logic has been proven as good candidate for high performance digital designs because of reduced overhead. Also the researchers are working towards amalgamation of techniques and PCRAM emerged as promising candidate. All the circuits have been simulated on HSPICE circuit simulator tool using 32nm technology. On the other hand, PCRAM cell using GST and the simulation result has been done using HSPICE modeling. In this paper a new CNTFET based Ternary SRAM cell has been proposed. The paper also contains numerous physical parameters to model PCRAM behavior. A PCRAM device exhibits the reset pulse width at 20ns and set pulse width at 100μs.