Inductive degeneration low noise amplifier for IR-UWB receiver for biomedical implant

This paper presents the design and simulation of an inductive degeneration low noise amplifier (LNA) for impulsionel radio ultra wide band receiver for biomedical implant. Several techniques was used in this study to improve the LNA features for the [1,5]GHz frequency band. The most important are the use of the diode connected load, the degeneration source and the cascode design. A fully integrated inductive degeneration LNA was designed using 0.18 μm CMOS process. It achieves a minimal noise figure of 1.7 dB, a maximal voltage gain of 15 dB and CP1 of -10 dBm.