Title : 
Performance enhancement of 0.18?m CMOS on chip bandpass filters using H-shaped parasitic element
         
        
            Author : 
Nessim Mahmoud;Anwer S. Abd El-Hameed;Adel Barakat;Adel B. Abdel-Rahman;Ahmed Allam;Ramesh K. Pokharel
         
        
            Author_Institution : 
Egypt-Japan University of Science and Technology, Alexandria, 21934, Egypt
         
        
        
        
        
            Abstract : 
A design of an improved open loop resonator on-chip bandpass filter for 60 GHz millimeter-wave applications using 0.18 μm CMOS technology is presented. The proposed on-chip BPF employs H-shaped parasitic structure inserted between two open loop coupled resonator. The adoption of a two open loop coupled resonators BPF and the utilization of two transmissions zero located at 48 and 80 GHz permit a compact size and high selectivity of the BPF. In addition, the parasitic H-shaped structure increases the capacitance between the two resonators, which enables a further reduction of the physical length of the filter and enhances the coupling between the resonators which improve the filter insertion loss. The proposed BPF has a center frequency of 60 GHz, an insertion loss of -2 dB, a 3dB band width of 13 GHz, and a core size 160×480 μm2 with total chip size 680×280 μm2 (including bonding pads).
         
        
            Keywords : 
"Band-pass filters","Insertion loss","CMOS integrated circuits","Resonator filters","CMOS technology","Couplings","Resonant frequency"
         
        
        
            Conference_Titel : 
Microelectronics (ICM), 2015 27th International Conference on
         
        
            Electronic_ISBN : 
2159-1679
         
        
        
            DOI : 
10.1109/ICM.2015.7438049