DocumentCode :
3763419
Title :
Towards functionality-enhanced devices: Controlling the modes of operation in three-independent-gate transistors
Author :
Pierre-Emmanuel Gaillardon;Jian Zhang;Michele De Marchi;Giovanni De Micheli
Author_Institution :
Integrated Systems Laboratory (LSI), EPFL, Switzerland
fYear :
2015
Firstpage :
1
Lastpage :
2
Abstract :
In this paper, we introduce the different modes of operation achievable with Three-Independent-Gate Field-Effect Transistors (TIGFETs) and report results on fabricated devices including: (i) the dynamic reconfiguration of the device polarity; (ii) the dynamic control of the threshold voltage; and (iii) the dynamic control of the subthreshold slope.
Publisher :
ieee
Conference_Titel :
Nanotechnology Materials and Devices Conference (NMDC), 2015 IEEE
Type :
conf
DOI :
10.1109/NMDC.2015.7439231
Filename :
7439231
Link To Document :
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