• DocumentCode
    3763427
  • Title

    Resistive switching effect at boundary between film like grown ZnO nanorods

  • Author

    Eunji Yoo;Jung Yeol Shin;Chi Jung Kang;Young Jin Choi

  • Author_Institution
    Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 143-747, Republic of Korea
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this study, we demonstrate that the resistive switching phenomena mainly occur at the boundary between ZnO nanorods by forming conducting filaments along the boundary in Au/ZnO nanorods/AZO structure. Conducting atomic force microscope study was conducted to confirm the location of conducting path between ZnO nanorods. Furthermore, the reliable resistive switching behavior was obtained from well-aligned boundary by vertically and compactly grown ZnO nanorods on the Al doped ZnO substrate.
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology Materials and Devices Conference (NMDC), 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/NMDC.2015.7439239
  • Filename
    7439239
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3763427