Title :
Multilevel resistance in Ti/Pt/AlOx/HfOy/Ti/Pt/Ag resistive switching devices
Author :
Farhana Anwar;John Nogan;Payman Zarkesh-Ha;Marek Osinski
Author_Institution :
Center for High Technology Materials, University of New Mexico, 1313 Goddard St. SE, Albuquerque, NM 87106-4343, USA
Abstract :
This paper demonstrates the potential use of AlOx/HfOy-based resistive switching device in analog and synaptic electronics. The novelty of this work is based on the fact that a large number of states were found for both positive (10 states) and negative (22 states) biases, compared to the reported literature. Multiple states were obtained by varying the compliance current. Furthermore, the device showed very low switching voltage (< 0.3 V) and current (?10 ?A).
Conference_Titel :
Nanotechnology Materials and Devices Conference (NMDC), 2015 IEEE
DOI :
10.1109/NMDC.2015.7439273
