DocumentCode :
3763466
Title :
Channel limitation of 1-D wire random network for transparent conducting electrodes application
Author :
Jinyoung Hwang;Sanghyun Lee;Hyosug Lee
Author_Institution :
Samsung Advanced Institute of Technology, Suwon-si, Gyeonggi-do 443-803, South Korea
fYear :
2015
Firstpage :
1
Lastpage :
2
Abstract :
1-D wire random network is a promising ITO substitute for flexible transparent conducting electrodes. However, the sheet resistance (Rs) of the 1-D network drastically increases when the network is patterned into narrow channels in electronic applications such as touch screen panel and light emitting diodes. In this work, the undesirable Rs increment of the 1-D wire random network is demonstrated based on Monte Carlo simulation, and critical factors that determine the channel width limitation are investigated. Moreover, aligned wire configuration in the random network is proposed in order to alleviate the constraint on the Rs of the narrow channel.
Publisher :
ieee
Conference_Titel :
Nanotechnology Materials and Devices Conference (NMDC), 2015 IEEE
Type :
conf
DOI :
10.1109/NMDC.2015.7439277
Filename :
7439277
Link To Document :
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