Prospects for high power nonpolar and semipolar GaN-based laser diodes

Polarization-related electric fields present one of the major challenges for conventional c-plane GaN-based hetero-structures. Nonpolar and semipolar orientations of GaN offer the potential for new device designs. In this presentation, we review the inherent features of these new crystal orientations for GaN for light emitters and discuss the major challenges and opportunities and some of the solutions that we have demonstrated at UCSB.