• DocumentCode
    3763686
  • Title

    Performance and reliability of high power, high brightness 8xx-9xx nm semiconductor laser diodes

  • Author

    Y. Yamagata;Y. Yamada;Y. Kaifuchi;R. Nogawa;R. Morohashi;M. Yamaguchi

  • Author_Institution
    Optoenergy Inc., Chiba, Japan
  • fYear
    2015
  • Firstpage
    7
  • Lastpage
    8
  • Abstract
    High-power and high-reliability single emitter laser diodes with 8xx-9xx nm lasing wavelength based on Asymmetric Decoupled Confinement Heterostructure (ADCH) are demonstrated. Laser structure optimization in vertical layer design and stripe width enabled high power operation of 9xx nm LDs up to 15-17 W range with high reliability. Possibility of further improvement in high power operation is also discussed.
  • Keywords
    "Reliability","Diode lasers","Optical device fabrication","Optical refraction","Optical variables control","Power generation","Resistance"
  • Publisher
    ieee
  • Conference_Titel
    High Power Diode Lasers and Systems Conference (HPD), 2015 IEEE
  • ISSN
    2379-0385
  • Print_ISBN
    978-1-4673-9177-1
  • Electronic_ISBN
    2379-0393
  • Type

    conf

  • DOI
    10.1109/HPD.2015.7439668
  • Filename
    7439668