DocumentCode
3763686
Title
Performance and reliability of high power, high brightness 8xx-9xx nm semiconductor laser diodes
Author
Y. Yamagata;Y. Yamada;Y. Kaifuchi;R. Nogawa;R. Morohashi;M. Yamaguchi
Author_Institution
Optoenergy Inc., Chiba, Japan
fYear
2015
Firstpage
7
Lastpage
8
Abstract
High-power and high-reliability single emitter laser diodes with 8xx-9xx nm lasing wavelength based on Asymmetric Decoupled Confinement Heterostructure (ADCH) are demonstrated. Laser structure optimization in vertical layer design and stripe width enabled high power operation of 9xx nm LDs up to 15-17 W range with high reliability. Possibility of further improvement in high power operation is also discussed.
Keywords
"Reliability","Diode lasers","Optical device fabrication","Optical refraction","Optical variables control","Power generation","Resistance"
Publisher
ieee
Conference_Titel
High Power Diode Lasers and Systems Conference (HPD), 2015 IEEE
ISSN
2379-0385
Print_ISBN
978-1-4673-9177-1
Electronic_ISBN
2379-0393
Type
conf
DOI
10.1109/HPD.2015.7439668
Filename
7439668
Link To Document