Title :
Design of a high-voltage driver based on low-voltage CMOS with an adapted level shifter optimized for a wide range of supply voltage
Author :
Sara Pashmineh;Dirk Killat
Author_Institution :
Department Microelectronics, Brandenburg University of Technology, Cottbus, 03046, Germany
Abstract :
This paper presents the design of a high-voltage driver with an adapted level shifter for switching converters. The proposed HV-driver and level shifter are based on stacked standard CMOS, therefore the design is technology independent. The circuit is designed in 65-nm TSMC technology with a nominal voltage of 2.5 V and optimized for arbitrary supply voltages from 2.6 V to 6.0 V. This range is extended by 41.7% when compared against common drivers and level shifters with the circuit being suitable for a supply voltage range of 2.4 V between 2.6 V and 5.0 V. The total area of the designed level shifter is about 3.8% of that required for similar circuit in previous work.
Keywords :
"Logic gates","MOSFET","CMOS integrated circuits","Voltage control","Standards","Switching circuits"
Conference_Titel :
Electronics, Circuits, and Systems (ICECS), 2015 IEEE International Conference on
DOI :
10.1109/ICECS.2015.7440235