DocumentCode :
3763820
Title :
Low power 2.5-Gb/s CMOS burst-mode transimpedance amplifier with fast response time using a novel peak detection circuit
Author :
Young-Ho Kim;Eun-Ok Kim;Wonjong Kim
Author_Institution :
SW-SoC Convergence Research Division, Electronics and Telecommunications Research Institute, 218 Gajeong-Ro, Yuseong-Gu, Daejeon, 305-700, Korea
fYear :
2015
Firstpage :
225
Lastpage :
228
Abstract :
A 2.5 Gb/s CMOS burst-mode transimpedance amplifier (BM-TIA) with a novel peak detection circuit is designed in this paper. The proposed peak detection circuit changes quickly the gain mode of the BM-TIA and then improves the data transmission capacity of the PON system with low power consumption. In order to obtain quick response time of the BM-TIA, a RC-LPF, an amplifier followed it and a replica circuit of the amplifier are built in. This BM-TIA was fabricated in 1P6M 0.18 μm CMOS process. The designed IC exhibits a quick response of 11 nsec for a 2.5 Gb/s burst preamble input. In this condition, this chip of 4 channel consumes 195.4 mW from a 1.8 V supply. In high gain mode, the BM-TIA achieves a gain of 66 dBΩ with 2.45 GHz bandwidth and the eye jitter (rms) of 4.243 ps.
Keywords :
"Gain","Schottky diodes","Detectors","Rectifiers","Passive optical networks","Bandwidth","Time factors"
Publisher :
ieee
Conference_Titel :
Electronics, Circuits, and Systems (ICECS), 2015 IEEE International Conference on
Type :
conf
DOI :
10.1109/ICECS.2015.7440289
Filename :
7440289
Link To Document :
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