DocumentCode
3763935
Title
1.55-μm Dilute Nitride SOAs with low temperature sensitivity for coolerless on-chip operation
Author
Giannis Giannoulis;Nikos Iliadis;Dimitrios Apostolopoulos;Paraskevas Bakopoulos;Hercules Avramopoulos;Ville-Markus Korpij?rvi;Jaakko M?kel?;Jukka Viheri?l?;Mircea Guina
Author_Institution
School of Electrical & Computer Engineering, National Technical University of Athens, Athens, Greece
fYear
2015
Firstpage
677
Lastpage
680
Abstract
The temperature dependence of GaAs and InP SOA materials is investigated experimentally in this work. The direct comparison study verified that Dilute Nitrides are less temperature sensitive showing enhanced thermal stability on ASE spectrum and gain measurements in CW mode. Wavelength Conversion experiment at 10 Gb/s verified that GaAs SOA keeps up with the fast gain dynamics and the proper data processing at elevated temperatures while the performance of InP material is drastically degraded by heating the SOA device.
Keywords
"Semiconductor optical amplifiers","Temperature measurement","Gain","Optical wavelength conversion","Gallium arsenide","Indium phosphide","III-V semiconductor materials"
Publisher
ieee
Conference_Titel
Electronics, Circuits, and Systems (ICECS), 2015 IEEE International Conference on
Type
conf
DOI
10.1109/ICECS.2015.7440407
Filename
7440407
Link To Document