DocumentCode
3764366
Title
Topological constraints of gate-level circuits obtained through standard cell recognition (SCR)
Author
L. A. Hsia;G. Vernizzi;M. Y. Lanzerotti;D. Langley;M. K. Seery;L. Orlando
Author_Institution
513th Electronic Warfare Squadron, Eglin Air Force Base, Florida, USA
fYear
2015
fDate
6/1/2015 12:00:00 AM
Firstpage
165
Lastpage
175
Abstract
This paper presents topological constraints of gate-level circuits obtained through standard cell recognition applied to gate-level commercial microelectronics verification. A suite of topological constraints, including the gate vertex count, net vertex count, terminal count, blocks, circuit genus, Euler characteristic, and number of faces are extracted from gate-level circuits obtained through standard cell recognition. Topological constraints are computed for two full adder cells at fourth level of abstraction and for two full adder cells at the third level of abstraction. Two mathematical frameworks are also introduced to describe physically distinct situations in hardware that are represented in a schematic as functionally equivalent. The first method uses the concept of a braid word, and the second method uses the concept of a crossing vertex. Schematic braid words corresponding to each of two full adder cell schematics at fourth level of abstraction and for two full adder cell schematics at the third level of abstraction are derived. Chip braid words corresponding to the set of unique physical designs that could potentially be realized in chip hardware from a schematic are obtained and discussed. Potential capabilities of these approaches for gate-level circuits are discussed.
Keywords
"Logic gates","Standards","Adders","Integrated circuits","Thyristors","Testing","Microelectronics"
Publisher
ieee
Conference_Titel
Aerospace and Electronics Conference (NAECON), 2015 National
Electronic_ISBN
2379-2027
Type
conf
DOI
10.1109/NAECON.2015.7443061
Filename
7443061
Link To Document