• DocumentCode
    3764378
  • Title

    Design of wide temperature range resonant-mode absolute MEMS pressure sensor

  • Author

    George Xereas;Charles Allan;Vamsy P. Chodavarapu

  • Author_Institution
    Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec, Canada H3A 0E9
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    232
  • Lastpage
    236
  • Abstract
    We describe the design and fabrication of a resonant absolute MEMS pressure sensor using a semi-custom fabrication process. We selected a double anchored Double-Ended Tuning Fork (DETF) resonator for this work. The pressure sensor design is based on fabricating two resonant structures side by side using MEMS Integrated Design for Inertial Sensors (MIDIS) process, a commercial pure-play MEMS process recently introduced by Teledyne DALSA Semiconductor Inc. (TDSI). The fabricated devices from MIDIS process are then post-processed to etch the handle wafer below one of the resonator devices (sensor) down to a pre-determined thickness that bends in response to the external ambient pressure. The second resonator is used as the reference where the handle wafer is left untouched. The proposed differential setup enables the pressure sensor to operate over a wide temperature range from -55°C to 225°C.
  • Keywords
    "Temperature sensors","Pressure sensors","Silicon","Micromechanical devices","Temperature distribution","Resonant frequency"
  • Publisher
    ieee
  • Conference_Titel
    Aerospace and Electronics Conference (NAECON), 2015 National
  • Electronic_ISBN
    2379-2027
  • Type

    conf

  • DOI
    10.1109/NAECON.2015.7443073
  • Filename
    7443073