DocumentCode
3764378
Title
Design of wide temperature range resonant-mode absolute MEMS pressure sensor
Author
George Xereas;Charles Allan;Vamsy P. Chodavarapu
Author_Institution
Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec, Canada H3A 0E9
fYear
2015
fDate
6/1/2015 12:00:00 AM
Firstpage
232
Lastpage
236
Abstract
We describe the design and fabrication of a resonant absolute MEMS pressure sensor using a semi-custom fabrication process. We selected a double anchored Double-Ended Tuning Fork (DETF) resonator for this work. The pressure sensor design is based on fabricating two resonant structures side by side using MEMS Integrated Design for Inertial Sensors (MIDIS) process, a commercial pure-play MEMS process recently introduced by Teledyne DALSA Semiconductor Inc. (TDSI). The fabricated devices from MIDIS process are then post-processed to etch the handle wafer below one of the resonator devices (sensor) down to a pre-determined thickness that bends in response to the external ambient pressure. The second resonator is used as the reference where the handle wafer is left untouched. The proposed differential setup enables the pressure sensor to operate over a wide temperature range from -55°C to 225°C.
Keywords
"Temperature sensors","Pressure sensors","Silicon","Micromechanical devices","Temperature distribution","Resonant frequency"
Publisher
ieee
Conference_Titel
Aerospace and Electronics Conference (NAECON), 2015 National
Electronic_ISBN
2379-2027
Type
conf
DOI
10.1109/NAECON.2015.7443073
Filename
7443073
Link To Document