Title :
Circuit perspective of Terahertz Double-Gate MOSFET for switch
Author :
Viranjay M. Srivastava
Author_Institution :
Department of Electronics Engineering, Howard College, University of KwaZulu-Natal, Durban - 4041, South Africa
Abstract :
The Double-Gate MOSFET can be used to design the nanotechnology based switches at the range of Terahertz for transceiver processes. In this research, the switching frequency with the help of transconductance for Terahertz Double-Gate MOSFET has been analyzed. The switching transient has been observed with inclusion of currents. It will be suitable for the application of nanotechnology regime.
Keywords :
"MOSFET","Logic gates","Capacitance","CMOS integrated circuits","Switches","Transconductance","Schottky diodes"
Conference_Titel :
India Conference (INDICON), 2015 Annual IEEE
Electronic_ISBN :
2325-9418
DOI :
10.1109/INDICON.2015.7443241
