• DocumentCode
    3764551
  • Title

    A hybrid CMOS-CNFET, 1.4-V 6.8-ppm/?C bandgap reference circuit

  • Author

    Sandip B. Rahane;A.K. Kureshi;S.D. Pable

  • Author_Institution
    Matoshri College of Engineering and Research Center Nasik, S.P.P.U., Pune, India
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    This paper proposes a novel hybrid CMOS-CNFET bandgap reference circuit consisting of a CMOS bandgap core and a CNFET error amplifier. Both CMOS and CNFET circuits are based on 32nm technology node. Resulting hybrid topology utilizes resistive subdivision method and low threshold CNFET devices to lower the common mode input voltage of the error amplifier. The proposed bandgap reference achieves temperature coefficient of 6.8 ppm/°C at 1.4V power supply over the temperature range of -25°C to 125°C. The circuit produces a reference voltage of around 500mV with line sensitivity of ±2.25mV/V and dissipates 26μW power.
  • Keywords
    "Photonic band gap","CMOS integrated circuits","CNTFETs","Temperature dependence","Temperature sensors","CMOS technology"
  • Publisher
    ieee
  • Conference_Titel
    India Conference (INDICON), 2015 Annual IEEE
  • Electronic_ISBN
    2325-9418
  • Type

    conf

  • DOI
    10.1109/INDICON.2015.7443249
  • Filename
    7443249