DocumentCode
3764551
Title
A hybrid CMOS-CNFET, 1.4-V 6.8-ppm/?C bandgap reference circuit
Author
Sandip B. Rahane;A.K. Kureshi;S.D. Pable
Author_Institution
Matoshri College of Engineering and Research Center Nasik, S.P.P.U., Pune, India
fYear
2015
Firstpage
1
Lastpage
5
Abstract
This paper proposes a novel hybrid CMOS-CNFET bandgap reference circuit consisting of a CMOS bandgap core and a CNFET error amplifier. Both CMOS and CNFET circuits are based on 32nm technology node. Resulting hybrid topology utilizes resistive subdivision method and low threshold CNFET devices to lower the common mode input voltage of the error amplifier. The proposed bandgap reference achieves temperature coefficient of 6.8 ppm/°C at 1.4V power supply over the temperature range of -25°C to 125°C. The circuit produces a reference voltage of around 500mV with line sensitivity of ±2.25mV/V and dissipates 26μW power.
Keywords
"Photonic band gap","CMOS integrated circuits","CNTFETs","Temperature dependence","Temperature sensors","CMOS technology"
Publisher
ieee
Conference_Titel
India Conference (INDICON), 2015 Annual IEEE
Electronic_ISBN
2325-9418
Type
conf
DOI
10.1109/INDICON.2015.7443249
Filename
7443249
Link To Document