Title :
170 MHz GBW, two stage CMOS operational amplifier with high slew rate using 180 nm technology
Author :
Guruprasad;Kumara Shama
Author_Institution :
ECE Dept. MIT, Manipal, India
Abstract :
Operational amplifiers (Op-amp) are vital components of any analog IC, improving its performance has a significant effect on the entire design. Among different approaches to realize an Op-amp, a Two stage i.e differential amplifier followed by common source amplifier is simple, elegant and occupies less space. The proposed paper presents design of a Two Stage CMOS Operational amplifier, which operates at ±1.8V power supply using 180 nm CMOS technology. The unity-gain bandwidth of the amplifier is 170 MHz. The Op-amp is internally frequency compensated using a miller capacitor for better stability and phase lag created by the zero is resolved by adding a resistor in series with the miller capacitor. The proposed Op-amp provides a slew rate of 189V/μs during rising edge and 227V/μs during falling edge. The circuit offers a open loop Gain of 60 dB with 79 degree phase margin. The designed system is relatively suitable for low power and high frequency applications.
Keywords :
"Gain","CMOS integrated circuits","MOSFET","Capacitance","Transconductance","CMOS technology"
Conference_Titel :
India Conference (INDICON), 2015 Annual IEEE
Electronic_ISBN :
2325-9418
DOI :
10.1109/INDICON.2015.7443521