Analysis of Cylindrical Gate Junctionless Tunnel Field Effect Transistor (CG-JL-TFET)

In this paper, a Cylindrical Gate Junctionless Tunnel Field Effect Transistor (CG-JL-TFET) has been investigated. This work is based on the simulation study done using Sentaurus. The electrical characteristics such as surface potential, energy band, electric field and drain current of the CG-JL-TFET) has been studied. The impact of different gate oxide material has been also analyzed. A comparison of CG-JL-TFET with various type of FET device has been also examined. The CG-JL-TFET with high-k dielectric material (TiO2) at 30-nm channel length shows excellent characteristics with high ION/IOFF ratio (7 × 109), a point sub-threshold slope (SS) of 28 mV/decade, and an average SS of 41 mV/decade at room temperature, which indicates that CG-JL-TFET is a promising candidate for a switching applications.