Analysis of symmetric high-k spacer (SHS) trigate Wavy FinFET: A novel device

This paper evaluates the novelty aspects of symmetric high-k spacer (SHS) trigate wavy FinFET over conventional FinFET. The SHS wavy FinFET is a hybrid device, which combines three significant and advanced technologies i.e., ultrathin body (UTB), Wavy channel FinFET, and high-k spacer on a single silicon on insulator (SOI) platform to enhance the device performance without increasing the chip area. In these recent days, high-k dielectric spacer materials are widely explored because of their better electrostatic control and more immune towards short channel effects (SCEs) in nanoscale devices. For the first time, this paper introduces a symmetric high-k dielectric spacer in Wavy channel FinFET and claims an effective improvement in drive current. In the meantime, the proposed device predicts better performances for analog/RF applications in subthreshold region of operation. From comprehensive 3-D device simulation, we have demonstrated that the proposed device is superior in performance as compared to trigate FinFET.