Title :
SCH doping effects in a 1.55 /spl mu/m InGaAsP/InGaAsP MQW electro-absorption modulator
Author :
Jongin Shim ; Yungseon Eo ; Donghoon Jang
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Hanyang Univ., Ansan, South Korea
Abstract :
The effects of n-doped SCH region length t/sub n/ as well as the general structure parameters in EA modulators were thoroughly analyzed. It was found that t/sub n/ played a crucial role to achieve high-performances in addition to the detuning /spl Delta//spl lambda/.
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; semiconductor doping; semiconductor quantum wells; 1.55 /spl mu/m InGaAsP/InGaAsP MQW electro-absorption modulator; 1.55 micron; EA modulators; InGaAsP-InGaAsP; SCH doping effects; detuning; n-doped SCH region; structure parameters; Chirp modulation; Doping; Electrooptic effects; Electrooptic modulators; Erbium; Extinction ratio; Optical devices; Propagation losses; Quantum well devices; Voltage;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-6738-3
DOI :
10.1109/CLEOPR.2001.970819
