DocumentCode
3765291
Title
Electrostatic analysis of graphene nanoribbon p-n junction diode
Author
Samira Shamsir;Laila Parvin Poly;Samia Subrina
Author_Institution
Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka, Bangladesh
fYear
2015
Firstpage
122
Lastpage
125
Abstract
We present a simplified electrostatic analysis to obtain the current voltage (I-V) characteristics of one dimensional (1D) p-n junction diodes based on doped graphene nanoribbons (GNR). GNR is a semiconductor with an energy gap having unique transport properties of graphene. Explicit analytical model have been formulated for the spatial distributions of the electrical field potential and the voltage along the junction and the whole device. The I-V characteristics of the diode based on ideal Shockley-diode is observed and compared with other diodes. A strong dependence of the diode current with the width of the GNR is observed. The obtained results are important to explore ultra-fast diodes made of GNRs.
Keywords
"Graphene","P-n junctions","Semiconductor diodes","Electric fields","Electric potential","Photonic band gap","Space charge"
Publisher
ieee
Conference_Titel
Electrical and Computer Engineering (WIECON-ECE), 2015 IEEE International WIE Conference on
Type
conf
DOI
10.1109/WIECON-ECE.2015.7444014
Filename
7444014
Link To Document