DocumentCode
376540
Title
Generation of highly spin polarized electrons at the interior of semiconductors by circularly polarized two-photon excitation
Author
Matsuyama, T. ; Suzuki, S. ; Mukai, M. ; Wada, K. ; Horinaka, H. ; Kondo, T. ; Hangyo, M. ; Togawa, K. ; Nakanishi, T.
Author_Institution
Depart. of Phys. & Electron., Osaka Prefecture Univ., Japan
Volume
2
fYear
2001
fDate
15-19 July 2001
Abstract
We propose a method for generating highly spin polarized electrons using circularly polarized two-photon excitation. Experimental results of spin dependent luminescence showed that electrons with initial spin polarization of 95% were generated in bulk p-GaAs.
Keywords
III-V semiconductors; gallium arsenide; laser beam effects; optical rotation; photoexcitation; photoluminescence; spin; two-photon processes; GaAs; bulk p-GaAs; circularly polarized two-photon excitation; highly spin polarized electron generation; initial spin polarization; semiconductors; spin dependent luminescence; Cathodes; Electron optics; Gallium arsenide; Laser excitation; Luminescence; Nonlinear optics; Optical filters; Optical polarization; Optical retarders; Optical sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location
Chiba, Japan
Print_ISBN
0-7803-6738-3
Type
conf
DOI
10.1109/CLEOPR.2001.970860
Filename
970860
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