DocumentCode
376554
Title
Picosecond pulse generation by gain switched 650 nm InGaAlP Fabry Perot laser diode
Author
Oh, K.H. ; Paek, U.-C. ; Kim, D.Y.
Author_Institution
Dept. of Inf. & Commun., Kwangiu Inst. of Sci. & Technol., Kwangju, South Korea
Volume
2
fYear
2001
fDate
15-19 July 2001
Abstract
We have investigated in time domain and wavelength domain various characteristics of a gain switched 650 nm InGaAlP Fabry Perot laser diode for ultrafast optical transmission systems. Optimum gain switching conditions are studied in detail with this laser diode.
Keywords
Fabry-Perot resonators; III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; optical communication equipment; optical pulse generation; semiconductor lasers; 650 nm; DC bias current value; Fabry Perot laser diode; InGaAlP; chirping effect; comb generator; gain switched laser diode; optimum gain switching conditions; picosecond pulse generation; population inversion; time domain; ultrafast optical transmission systems; wavelength domain; Diode lasers; Frequency; Optical filters; Optical pulse generation; Optical pulses; Pulse amplifiers; Pulse generation; Pulse width modulation; Signal generators; Space vector pulse width modulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location
Chiba, Japan
Print_ISBN
0-7803-6738-3
Type
conf
DOI
10.1109/CLEOPR.2001.970876
Filename
970876
Link To Document