Title :
Micromachining of SiC by femtosecond laser ablation
Author :
Aoki, N. ; Sugioka, K. ; Obata, K. ; Akane, T. ; Takahashi, T. ; Cho, S.H. ; Kumagai, H. ; Toyoda, K. ; Midorikawa, K.
Author_Institution :
RIKEN, Inst. of Phys. & Chem. Res., Saitama, Japan
Abstract :
High-speed etching of single-crystal 6H-SiC by femtosecond Ti:sapphire laser ablation was demonstrated. Fine line pattern of 60 /spl mu/m in depth was fabricated with relatively smooth etched surface with little damage.
Keywords :
etching; laser ablation; micromachining; silicon compounds; 60 micron; SiC; femtosecond Ti:sapphire laser ablation; femtosecond laser ablation; fine line pattern; high-speed etching; micromachining; relatively smooth etched surface; Chemical industry; Chemical lasers; Etching; Laser ablation; Laser theory; Micromachining; Microscopy; Optical pulses; Silicon carbide; Ultrafast electronics;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-6738-3
DOI :
10.1109/CLEOPR.2001.970944
