Annealing temperature and spin speed effect on TiO2 nanostructured topology and electrical properties

TiO₂ were deposited by using one of the sol-gel methods, the spin coating method. The speed of the spin coater used can be adjusted up to 8000rpm, but in this study only 1000rpm, 2000rpm and 3000rpm was used. There are 3 level of speed with different annealing temperature to provide a fine differentiation in between each parameter. These parameters will be characterized by current-voltage (I-V), Atomic Force Microscopy (AFM), UltraViolet-Visible spectrophotometry (UV-Vis) and RAMAN spectroscopy. As further discovered, lower rpm have quite a thick film that it could not be characterized by AFM, that makes some of the samples did not have AFM characterization. The highest point of the current at 10V in the IV graph is at 1000rpm spin speed and annealed at 425°C temperature of 6.1E-8 which then makes it the highest in conductivity at 5.39E+5.