Title :
Stable single-mode 850 nm VCSELs with a higher-order mode absorber formed by shallow Zn diffusion
Author :
Chen, C.C. ; Liaw, S.J. ; Yang, Y.J.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
We report that an 850 nm VCSEL with a planar higher-order mode absorber formed by shallow Zn diffusion (<0.3 /spl mu/m deep) operated at stable single-mode. A 5 /spl mu/m square device showed single-mode emission with a /spl sim/ 0.8 mA threshold, a 2.2 mW maximum output power, and a mode suppression ratio of 40 dB.
Keywords :
diffusion; distributed Bragg reflector lasers; laser modes; quantum well lasers; surface emitting lasers; 0.3 micron; 0.8 mA; 2.2 mW; 5 micron; 850 nm; MQW active layer; higher-order mode absorber; local area network; maximum output power; mode suppression ratio; planar higher-order mode absorber; shallow Zn diffusion; single-mode emission; stable single-mode 850 nm VCSEL; threshold; Absorption; Apertures; Distributed Bragg reflectors; Optical fiber LAN; Optical losses; Optical saturation; Power generation; Vertical cavity surface emitting lasers; Voltage; Zinc;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-6738-3
DOI :
10.1109/CLEOPR.2001.971096
