Title :
GaAs/AlGaAs buried-heterostructure laser diodes with semi-insulating GaInP:Fe regrowth
Author :
Angulo Barrios, C. ; Lourdudoss, S. ; Messmer, L.R. ; Holmgren, M. ; Lovqvist, A. ; Carlsson, C. ; Larsson, A. ; Halonen, J. ; Ghisoni, M. ; Stevens, R. ; Schatz, R.
Author_Institution :
Dept. of Electron., R. Inst. of Technol., Kista, Sweden
Abstract :
GaAs/AlGaAs buried-heterostructure in-plane lasers and vertical-cavity surface-emitting lasers using GaInP:Fe as the burying layer have been fabricated and investigated. Regrowth of GaInP:Fe around etched laser mesas was achieved by hydride vapor phase epitaxy. The lasers exhibit good performance under CW operation and show promising high-speed characteristics.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; iron; optical fabrication; semiconductor growth; semiconductor lasers; surface emitting lasers; vapour phase epitaxial growth; 850 nm; CW operation; GaAs-AlGaAs; GaAs/AlGaAs buried-heterostructure laser diodes; GaInP:Fe; GaInP:Fe burying layer; etched laser mesas; high-speed characteristics; hydride vapor phase epitaxy; in-plane lasers; performance; regrowth; semi-insulating GaInP:Fe regrowth; vertical-cavity surface-emitting lasers; Diode lasers; Epitaxial growth; Etching; Gallium arsenide; High speed optical techniques; Scanning electron microscopy; Semiconductor lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-6738-3
DOI :
10.1109/CLEOPR.2001.971097
