Title :
Nonlinear gain factor of 1.26 /spl mu/m GaInNAs-based SQW lasers
Author :
Shimizu, H. ; Kumada, K. ; Uchiyama, S. ; Kasukawa, A.
Author_Institution :
Yokohama R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan
Abstract :
The nonlinear gain factor of 1.26 /spl mu/m GaInNAs-based SQW lasers, that includes a small amount of Sb to improve the crystalline-quality, was investigated for the first time. GaInNAs-based lasers have an extremely large differential gain of 1.06 /spl times/ 10/sup -15/ cm/sup 2/ in spite of the single-QW; however, at the same time, the lasers have an enormously large nonlinear gain factor of 9 /spl times/ 10/sup -17/ cm/sup 3/.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; laser transitions; quantum well lasers; 1.26 /spl mu/m GaInNAs-based SQW lasers; 1.26 micron; GaInNAsSb; crystalline-quality; extremely large differential gain; nonlinear gain factor; single-QW; Crystallization; Damping; Electrons; Equations; Frequency; Gallium arsenide; Gas lasers; Laser noise; Power generation; Research and development;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-6738-3
DOI :
10.1109/CLEOPR.2001.971101
