Title :
Room temperature continuous-wave operation of GaInNAs/GaAs VCSELs grown by chemical beam epitaxy with output power exceeding 1 mW
Author :
Makino, S. ; Miyamoto, T. ; Kageyarna, T. ; Ikenaga, Y. ; Nishiyama, N. ; Matsutani, A. ; Koyama, F. ; Iga, K.
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
We fabricated a 1200 nm range GaInNAs/GaAs quantum wells vertical cavity surface emitting laser grown by chemical beam epitaxy. Room temperature continuous-wave operation has been demonstrated with a record low threshold current density of 2.6 kA/cm/sup 2/.
Keywords :
III-V semiconductors; chemical beam epitaxial growth; current density; gallium arsenide; indium compounds; quantum well lasers; surface emitting lasers; 1 mW; 1185 nm; Al/sub 0.7/Ga/sub 0.3/As-GaAs; GaInNAs-GaAs; GaInNAs/GaAs VCSELs; GaInNAs/GaAs quantum wells; chemical beam epitaxy; output power; room temperature continuous-wave operation; threshold current density; Chemical lasers; Epitaxial growth; Gallium arsenide; Laser beams; Molecular beam epitaxial growth; Power generation; Quantum well lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-6738-3
DOI :
10.1109/CLEOPR.2001.971106
