Modulation characteristics of highly strained 1100 nm GaInAs/GaAs vertical cavity surface emitting laser on GaAs (311)B

Author

Arai, M. ; Nishiyama, N. ; Azuchi, M. ; Matsutani, A. ; Koyama, F. ; Iga, K.

Author_Institution

Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan

Volume

2

fYear

2001

fDate

15-19 July 2001

Abstract

We have investigated the modulation characteristics of a highly strained GaInAs/GaAs vertical cavity surface emitting laser. This laser exhibits stable polarization operation and the emitting wavelength is 1125 nm. The eye pattern after 5 km single-mode fiber transmission was clearly opened under 1 Gbit/s modulation speed.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser stability; optical modulation; optical transmitters; quantum well lasers; surface emitting lasers; 1 Gbit/s; 1125 nm; 5 km; Ga/sub 0.68/In/sub 0.32/As-GaAs; GaAs; GaAs (311)B; emitting wavelength; eye pattern; highly strained GaInAs/GaAs vertical cavity surface emitting laser; modulation characteristics; modulation speed; single-mode fiber transmission; stable polarization operation; Data communication; Distributed Bragg reflectors; Fiber lasers; Gallium arsenide; Optical fiber polarization; Optical polarization; Optical surface waves; Oxidation; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on

Conference_Location

Chiba, Japan

Print_ISBN

0-7803-6738-3

Type

conf

DOI

10.1109/CLEOPR.2001.971107

Filename

971107