Charge pump circuit with improved absolute current deviation and increased dynamic output voltage range across PVT variations

A charge-pump circuit, that provides highly matched charging and discharging current for an increased dynamic output voltage range with reduced absolute current deviation across process-voltage-temperature (PVT) variation is presented. The proposed charge-pump circuit featuring regulated-cascode current source and sink circuits along with dual error amplifier based feedback mechanism demonstrates current mismatch below 1% over output voltage variation of 0.1 V to 1.5 V and absolute current variation is less than 0.5% over output voltage variation (0.1V_dd to 0.9V_dd) under nominal process conditions. Circuit performs fairly well under different CMOS process condition for a wide temperature range of -400 C to 1000 C with 1.8 V to 2.2 V supply variation in 180 nm CMOS process.