Title :
Femtosecond-LT-GaAs photoconductive switching
Author :
Wei-Zhu Lin ; Bing Guo ; Jin-Hui Wen ; Rui Liao ; Hai-Chao Zhang
Author_Institution :
Dept. of Phys., Zhongshan Univ., Guangzhou, China
Abstract :
As short as 350 fs of photoconductive switching response time has been measured in a LT-GaAs photoconductive switch with femtosecond photocurrent autocorrelation technique.
Keywords :
III-V semiconductors; gallium arsenide; optical pulse generation; photoconducting switches; pulse measurement; 350 fs; GaAs; femtosecond optical pulses; femtosecond photoconductive switching; femtosecond photocurrent autocorrelation technique; grating effect; optical pulses mapping; photoexcited electron lifetime; pump-probe beams; transmission line geometry; ultrafast photoconductive switches; ultrafast photoresponse; Autocorrelation; Charge carrier processes; Electron mobility; Optical pulses; Optical switches; Photoconductivity; Pulse measurements; Shape measurement; Ultrafast optics; Voltage;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-6738-3
DOI :
10.1109/CLEOPR.2001.971175
