DocumentCode
376766
Title
Femtosecond-LT-GaAs photoconductive switching
Author
Wei-Zhu Lin ; Bing Guo ; Jin-Hui Wen ; Rui Liao ; Hai-Chao Zhang
Author_Institution
Dept. of Phys., Zhongshan Univ., Guangzhou, China
Volume
2
fYear
2001
fDate
15-19 July 2001
Abstract
As short as 350 fs of photoconductive switching response time has been measured in a LT-GaAs photoconductive switch with femtosecond photocurrent autocorrelation technique.
Keywords
III-V semiconductors; gallium arsenide; optical pulse generation; photoconducting switches; pulse measurement; 350 fs; GaAs; femtosecond optical pulses; femtosecond photoconductive switching; femtosecond photocurrent autocorrelation technique; grating effect; optical pulses mapping; photoexcited electron lifetime; pump-probe beams; transmission line geometry; ultrafast photoconductive switches; ultrafast photoresponse; Autocorrelation; Charge carrier processes; Electron mobility; Optical pulses; Optical switches; Photoconductivity; Pulse measurements; Shape measurement; Ultrafast optics; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location
Chiba, Japan
Print_ISBN
0-7803-6738-3
Type
conf
DOI
10.1109/CLEOPR.2001.971175
Filename
971175
Link To Document