DocumentCode
3767990
Title
Calculation and analysis of IGBT power loss in drive system for EV
Author
Hui Hui Bao;Wei Zhang;Yi Yang;Yi Chen
Author_Institution
Department of Electrical Engineering, Nantong University, Nantong 226019, China
fYear
2015
Firstpage
276
Lastpage
277
Abstract
Nowadays, the electric vehicle (EV) gradually replace the traditional fuel vehicle. Besides the batteries and the motor, the power electronic devices are important parts in an EV. In the paper, the co-simulation model of drive system in EV is established and investigated by software Simplorer and Matlab/Simulink, and the power loss of IGBT is calculated and analyzed by considering the influence of frequency and temperature. The result shows that the switching frequency and working temperature have obvious influences on the power device loss, and therefore the IGBT power loss can not be neglected for the precise design of drive system.
Keywords
"Insulated gate bipolar transistors","Mathematical model","Integrated circuit modeling","Induction motors","Junctions","Software","Electric vehicles"
Publisher
ieee
Conference_Titel
Applied Superconductivity and Electromagnetic Devices (ASEMD), 2015 IEEE International Conference on
Print_ISBN
978-1-4673-8106-2
Type
conf
DOI
10.1109/ASEMD.2015.7453571
Filename
7453571
Link To Document