Polysilicon diodes as temperature sensors for chemical microreaction systems

Author

Karnik, Sooraj V. ; Vo, Huyen X. ; Hatalis, Miltiadis K. ; Kothare, Mayuresh V.

Author_Institution

Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA

fYear

2001

fDate

2001

Firstpage

174

Lastpage

177

Abstract

Lateral polysilicon P⁺-N-N⁺ and P⁺-P-N⁺ diodes were fabricated and their electrical properties such as ON current, reverse current and series resistance were studied at various temperatures in the range of 50°C to 150°C. It was found that both reverse and forward currents of the diodes increased with the temperature. Using these electrical properties as parameters, the lateral polysilicon diodes can be used as temperature sensors in microreaction systems

Keywords

chemical sensors; elemental semiconductors; micromechanical devices; microsensors; semiconductor diodes; silicon; temperature sensors; thermochemistry; 50 to 150 C; MEMS; Si; chemical microreaction systems; electrical properties; lateral polysilicon P⁺-N-N⁺ diode; lateral polysilicon P⁺-P-N⁺ diode; polysilicon diodes; reverse current; series resistance; temperature sensors; Active matrix organic light emitting diodes; Chemical sensors; Conducting materials; Infrared image sensors; Micromechanical devices; Semiconductor diodes; Silicon; Substrates; Temperature sensors; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2001 International

Conference_Location

Washington, DC

Print_ISBN

0-7803-7432-0

Type

conf

DOI

10.1109/ISDRS.2001.984468

Filename

984468