Title :
The research of 220 GHz InP HBT monolithic power amplifier
Author :
Zhang Lv; Wang Lei; Ruimin Xu
Author_Institution :
School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
Abstract :
In this paper, a 220 GHz monolithic power amplifier (PA) is presented by using InP heterojunction bipolar transistor (HBT) technology. A cascode constituted by common emitter and common base InP HBTs is employed due to its superior high-frequency maximum stable gain (MSG). The result shows that a two-stage monolithic microwave integrated circuit (MMIC) power amplifier using an emitter width 0.5 um Indium Phosphide HBT technology can demonstrate 14dB small signal gain.
Keywords :
"Heterojunction bipolar transistors","MMICs","Capacitors","Indium","Gain","Radiometry","Weapons"
Conference_Titel :
Communication Problem-Solving (ICCP), 2015 IEEE International Conference on
Print_ISBN :
978-1-4673-6543-7
DOI :
10.1109/ICCPS.2015.7454116
