DocumentCode
376862
Title
Design of circular waveguide transition with circular profile in electron cyclotron resonance plasma etching system
Author
Jan-Dong Tseng ; Chi-Chan Lin
Author_Institution
Dept. of Electron. Eng., Nat. Chin Yi Inst. of Technol., Taichung, Taiwan
Volume
2
fYear
2001
fDate
3-6 Dec. 2001
Firstpage
550
Abstract
A circular waveguide transition for 2.45 GHz ECR (electron cyclotron resonance) plasma etching system is designed. This circular waveguide transition is constructed in its longitudinal profile by two circular curves. In addition, two circular curves tangent values are continuous at the connected point. The magnitude of the electric field at the output of the waveguide transition for three different curvature values are investigated. The best field uniformity of electric field in the case we discussed is found.
Keywords
circular waveguides; electric fields; sputter etching; waveguide transitions; 2.45 GHz; 37.5 mm; ECR plasma etching system; circular waveguide transition; curvature values; electric field; electron cyclotron resonance; field uniformity; longitudinal profile; Cyclotrons; Electrons; Etching; Plasma applications; Plasma density; Plasma materials processing; Plasma sources; Plasma waves; Resonance; Waveguide transitions;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific
Conference_Location
Taipei, Taiwan
Print_ISBN
0-7803-7138-0
Type
conf
DOI
10.1109/APMC.2001.985433
Filename
985433
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