Title :
A novel technique for accurate noise modelling
Author :
Ratna, Pummy ; Kirty, V.S.R.
Author_Institution :
Semicond. Complex Ltd., Hyderabad, India
Abstract :
Recent MESFET and HEMT noise models have derived all four noise parameters, Fmin, Rn, mag (Gopt), ang (Gopt), and generally show good (but not excellent) agreement with all of them. This paper describes a novel correction technique developed and incorporated in the existing Fukui model. This modified model not only shows excellent agreement with measured data but also has been successfully applied in MMIC designs. The correction factor is applicable to any generic model equations.
Keywords :
Schottky gate field effect transistors; error correction; high electron mobility transistors; microwave field effect transistors; semiconductor device models; semiconductor device noise; sensitivity analysis; Damberine model; Fukui model; HEMT noise models; MESFET noise models; MMIC designs; RF performance; error correction technique; noise parameters; sensitivity analysis; Circuit noise; Equations; Error correction; Frequency measurement; HEMTs; MESFETs; MMICs; Noise figure; Noise measurement; Semiconductor device noise;
Conference_Titel :
Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-7138-0
DOI :
10.1109/APMC.2001.985475
